| 摘要 |
A method of manufacturing the semiconductor device is provided to prevent the leakage current caused by voids by redepositing the interlayer insulating film after removing voids by the isotropic wet etching. A plurality of metal wirings consisting of the first barrier film(204), and the metal layer(206) and the second barrier film(208) is formed on the substrate. The first interlayer insulating film(210) is formed in the gap between a plurality of metal wirings by the HDP - CVD process. The voids formed inside the first interlayer insulating film are removed by the wet etching. The second interlayer dielectric(218) is formed on the first interlayer insulating by the HDP - CVD process. The second interlayer dielectric is planarized through the chemical mechanical polishing process.
|
