SEMICONDUCTOR MEMORY DEVICE USING FERROELECTRIC DEVICE AND METHOD FOR REFRESH THEREOF

摘要

A semiconductor memory device using a ferroelectric element and a refresh method of the same are provided to reduce a cell area by applying 1T-FET(1 transistor-Field Effect Transistor ) type ferroelectric memory cell to a DRAM to store 2n-bits in one unit cell. A channel region is formed on a substrate(1). A first drain/source region(2) and a second drain/source region(3) are formed in both ends of the channel region. A ferroelectric layer(4) is formed on an upper part of the channel region. A word line(5) is formed on an upper part of the ferroelectric layer. A left n-bits storage unit(10) stores left n-bits data. A right n-bits storage unit(20) stores right n-bits data.