RESISTANCE SWITCHING ELEMENT, METHOD FOR MANUFACTURING, RECORDING AND READING THE SAME

摘要

A resistance switching element is provided to reduce driving voltage while reducing power consumption by using an insulating layer including the resistance change layer. A resistance switching element includes a bottom electrode(110), insulating layer(120) on the bottom electrode and upper electrode(130) formed on the insulating layer. An insulating layer comprises one of the buffer layer(121) and resistance change layer(122). The buffer layer includes the transition metal oxide thin film, and the resistance change layer includes the chalcogenide system compound thin film. The buffer layer is formed on the bottom electrode, and the resistance change layer is formed on the buffer layer.