发明名称 Integrated circuit with device for protecting against electrostatic discharges
摘要 <p>Integrated circuit (20) comprising: - a substrate of semiconductive material; - a first circuit environment (CE_1) made from said substrate, comprising a first pair of power supply terminals (VDD1,GND1) to receive a first power supply voltage applicable between said terminals (VDD1,GND1) and also comprising an output terminal (ou1); - a second circuit environment (CE_2) made from said substrate, comprising a second pair of power supply terminals (VDD2,GND2), distinct from said first pair of terminals (VDD1,GND1), to receive a second power supply voltage applicable between terminals of said second pair and also comprising an input terminal (In2) electrically coupled with said output terminal (Ou1). The integrated circuit comprises a device for protecting from electrostatic discharges comprising an integrated resistive device (Rcd) connected between said output terminal (Ou1) and said input terminal (In2).</p>
申请公布号 EP2023392(A1) 申请公布日期 2009.02.11
申请号 EP20070425517 申请日期 2007.08.08
申请人 STMICROELECTRONICS S.R.L. 发明人 CONFALONIERI, PIERANGELO;MARTIGNONE, RICCARDO;PERNICI, SERGIO
分类号 H01L27/02 主分类号 H01L27/02
代理机构 代理人
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