发明名称 |
ELECTRONIC COMPONENT, SEMICONDUCTOR PACKAGE AND ELECTRONIC DEVICE |
摘要 |
In a conventional UBM made of, for example, Cu, Ni, or NiP, there has been a problem that when an electronic component is held in high-temperature conditions for an extended period, the barrier characteristic of the UBM is lost and the bonding strength decreases due to formation of a brittle alloy layer at a bonding interface. The present invention improves the problem of decrease in long-term connection reliability of a solder connection portion after storage at high temperatures. The electronic component comprises an electrode pad formed on a substrate or a semiconductor element and a barrier metal layer formed to cover the electrode pad and the barrier metal layer comprises a CuNi alloy layer on the side opposite the side in contact with the electrode pad, the CuNi alloy layer containing 15 to 60at% of Cu and 40 to 85at% of Ni. |
申请公布号 |
EP2023384(A1) |
申请公布日期 |
2009.02.11 |
申请号 |
EP20070743857 |
申请日期 |
2007.05.22 |
申请人 |
NEC CORPORATION;NEC ELECTRONICS CORPORATION |
发明人 |
SOGAWA, YOSHIMICHI;YAMAZAKI, TAKAO;TAKAHASHI, NOBUAKI |
分类号 |
H01L23/485;H01L21/60;H01L23/498;H05K3/34 |
主分类号 |
H01L23/485 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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