发明名称 |
SEMICONDUCTOR ON INSULATOR STRUCTURE MADE USING RADIATION ANNEALING |
摘要 |
Systems and methods for and products of a semiconductor-on-insulator (SOI) structure including subjecting at least one unfinished surface to a laser annealing process. Production of the SOI structure further may include subjecting an implantation surface of a donor semiconductor wafer to an ion implantation process to create an exfoliation layer in the donor semiconductor wafer; bonding the implantation surface of the exfoliation layer to an insulator substrate; separating the exfoliation layer from the donor semiconductor wafer, thereby exposing at least one cleaved surface; and subjecting the at least one cleaved surface to the laser annealing process. |
申请公布号 |
EP2022089(A2) |
申请公布日期 |
2009.02.11 |
申请号 |
EP20070795413 |
申请日期 |
2007.05.24 |
申请人 |
CORNING INCORPORATED |
发明人 |
COUILLARD, JAMES, G.;LEHUEDE, PHILIPPE;VALLON, SOPHIE, A. |
分类号 |
H01L21/268;H01L21/00;H01L21/762 |
主分类号 |
H01L21/268 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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