发明名称 FLASH MEMORY DEVICE REMAPPING BAD BLOCKS AND BAD BOLCK REMAPPING METHOD THEREOF
摘要 A flash memory device for remapping bad blocks and a bad block remapping method thereof are provided to reduce a chip area and to enhance utility of memory blocks by composing identically row decoder circuits of the memory blocks. A flash memory device for remapping bad blocks includes an address storage block(130) and an encoder. The address storage block detects whether a block address(BLK_Add) provided from the outside is identical with a pre-stored block address or not. The address storage block generates a repair signal(/REDn) according to the detected result. The encoder converts the repair signal to a block selection signal for selecting a normal memory block.
申请公布号 KR20090014823(A) 申请公布日期 2009.02.11
申请号 KR20070079097 申请日期 2007.08.07
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 KIM, MIN SU
分类号 G11C16/08;G11C29/00 主分类号 G11C16/08
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