发明名称 |
FLASH MEMORY DEVICE REMAPPING BAD BLOCKS AND BAD BOLCK REMAPPING METHOD THEREOF |
摘要 |
A flash memory device for remapping bad blocks and a bad block remapping method thereof are provided to reduce a chip area and to enhance utility of memory blocks by composing identically row decoder circuits of the memory blocks. A flash memory device for remapping bad blocks includes an address storage block(130) and an encoder. The address storage block detects whether a block address(BLK_Add) provided from the outside is identical with a pre-stored block address or not. The address storage block generates a repair signal(/REDn) according to the detected result. The encoder converts the repair signal to a block selection signal for selecting a normal memory block.
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申请公布号 |
KR20090014823(A) |
申请公布日期 |
2009.02.11 |
申请号 |
KR20070079097 |
申请日期 |
2007.08.07 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM, MIN SU |
分类号 |
G11C16/08;G11C29/00 |
主分类号 |
G11C16/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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