| 摘要 |
Silicon photomultiplier (SPM) circuitry is provided that comprises at least one silicon photomultiplier pixel, each pixel comprising a plurality of silicon photomultiplier microcells. The silicon photomultiplier circuitry comprises control circuitry adapted to maintain a substantially constant voltage on a connection node between microcells of the pixel. The control circuitry is adapted to minimize the onset and recovery time of an output signal by maintaining a substantially constant voltage on the connection node. The SPM pixel may be coupled to a trans-impedance amplifier. Alternatively the circuitry may comprise on-chip bipolar or metal oxide semiconductor transistors. The capacitance that exists in the SPM array may be optimized by minimizing the tracking capacitance of the SPM. This may be achieved with a tracking arrangement that includes a single metal line for each row or for each pair of rows of SPM microcells. |
