| 摘要 |
921,367. Semi-conductor devices. STANDARD TELEPHONES & CABLES Ltd. April 1, 1960 [April 6, 1959], No. 11591/60. Class 37. A semi-conductor device having a PN or PIN junction has a sloping surface across the junction. Fig. 1 shows a semi-conductor device, which may be an alloyed or diffused junction type PN rectifier. The rectifier 8 has a sloping surface across the face 5 although only the region of the junction may be sloped. This bevelled edge may be produced by ultrasonic techniques or by saw cutting. The bevelled edge is etched to remove surface contaminants, is heated in a vacuum chamber to remove gaseous impurities and is finally coated with a non-porous layer 11 on the sloping surface. The Figure shows the process being carried out. Filament 12 of tungsten is coated with the material to be deposited on the sloping surface when the filament is heated. The coating material is a glass and may be of material taken from quartz, magnesium fluoride, silica and zirconium silicoted. Organic materials such as polystyrene and silicone polymers can be used. An arrangement is described (Fig. 3, not shown) in which a PIN diffused junction silicon rectifier the slope of the face of which to the horizontal is between one and five degrees. The Specification also refers to bevelling the junction area of transistors and to using germanium instea odf silicon. |
