| 摘要 |
A semiconductor memory device is provided to perform a pumping operation according to a control signal activated within a voltage pump by activating a pulse signal path. A control signal generation unit generates control signals within a voltage pump. A pumping unit(310) performs a voltage pumping operation in response to a voltage pumping signal outputted from a capacitor(321). A transfer unit(320) is operated according to the control signals in order to drive a capacitor as a high voltage pump capacitor or an external voltage capacitor.
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