发明名称 |
Process for forming a buried plate |
摘要 |
A method is provided for making a buried plate region in a semiconductor substrate. According to such method, a trench is a single-crystal semiconductor region of a substrate is etched to form a trench elongated in a direction extending downwardly from a major surface of the substrate. A dopant source layer is formed to overlie a lower portion of the trench sidewall but not an upper portion of the trench sidewall. A layer consisting essentially of semiconductor material is epitaxially grown onto a single-crystal semiconductor region exposed at the upper portion of the trench sidewall above the dopant source layer. Through annealing, a dopant is then driven from the dopant source layer into the single-crystal semiconductor material of the substrate adjacent to the lower portion to form a buried plate. Then, the dopant source layer is removed and an isolation collar is formed along at least a part of the upper portion.
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申请公布号 |
US7488642(B2) |
申请公布日期 |
2009.02.10 |
申请号 |
US20070715751 |
申请日期 |
2007.03.08 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
CHENG KANGGUO;DIVAKARUNI RAMACHANDRA |
分类号 |
H01L21/8242;H01L21/331;H01L21/76;H01L29/94 |
主分类号 |
H01L21/8242 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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