| 摘要 |
A process for preparation of thin layered structure is provided to reduce process time and the loss of the raw material by forming a multi-layer through change of the plasma frequency while putting gas atmosphere of the reaction chamber stay. A first thin film is formed on material member while plasma frequency is the first frequency based on a PC CVD process. A second thin film is formed on the materials member while the plasma frequency is the secondary frequency lower than the first frequency. Here, the refractive index of the first thin film is different from the refractive index of the second thin film, and first frequency and the secondary frequency are alternated.
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