RF amplifier with stacked transistors, transmitting device, and method therefor

摘要

An RF transmitting device (10) includes an RF amplifier (22) formed having components formed on a common semiconductor substrate (14). RF amplifier (22) includes MOS transistors (42) and (44) and an RF choke (46) stacked between a ground node (32) and a Vdd node (36). Transistors (42) and (44) are directly connected together and are biased by a control terminal bias network (58) so that the voltages appearing across their conduction terminals are about equal. Control terminals (56) and (62) of transistors (42) and (44) are driven by in-phase versions of an RF input signal (20).