发明名称 |
Semiconductor light emitting element, its manufacturing method and semiconductor light emitting device |
摘要 |
A light emitting element comprises a GaP substrate and a mesa portion. The GaP substrate includes a major surface inclined to the <011> direction from the {100} plane and a side surface covered with inequalities substantially. The mesa portion has a light emitting multi-layer of InGaAlP based material provided on the major surface. A part of a light emitted from the light emitting multi-layer is extracted through the side surface of the GaP substrate.
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申请公布号 |
US7488989(B2) |
申请公布日期 |
2009.02.10 |
申请号 |
US20040863269 |
申请日期 |
2004.06.09 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
NITTA KOICHI;NAKAMURA TAKAFUMI;FUJIWARA AKIHIRO;KONNO KUNIAKI;SUGAWARA YASUHARU |
分类号 |
H01L21/205;H01L21/306;H01L29/06;H01L33/06;H01L33/10;H01L33/14;H01L33/16;H01L33/22;H01L33/30;H01L33/54;H01L33/60;H01L33/62 |
主分类号 |
H01L21/205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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