发明名称 Stacked semiconductor device
摘要 As a defective contact recovery elements, a stacked semiconductor device include a parallel arrangement system in which signal paths are multiplexed, and a defective contact recovery circuit operable to switch a signal path into an auxiliary signal path. The parallel arrangement system is used in a case where the number of signals is small and a very high speed operation is required because of a serial data transfer. The defective contact recovery circuit is used in a case where the number of signals is large because of a parallel data transfer.
申请公布号 US7489030(B2) 申请公布日期 2009.02.10
申请号 US20060635500 申请日期 2006.12.08
申请人 ELPIDA MEMORY, INC. 发明人 SHIBATA KAYOKO;IKEDA HIROAKI;INOUE YOSHIHIKO;MIWA HITOSHI;IJIMA TATSUYA
分类号 H01L23/02 主分类号 H01L23/02
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