| 摘要 |
An EEPROM having a nonvolatile memory cell is provided. The nonvolatile memory cell has a first MOS transistor and a second MOS transistor. The first MOS transistor and the second MOS transistor have a gate electrode in common, the gate electrode being a floating gate electrically isolated from a surrounding circuitry. The first MOS transistor and the second MOS transistor are of a same conductivity type.
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