| 摘要 |
A semiconductor memory device including a delay locked loop can minimize current consumption during a precharge power down mode. The delay locked loop includes a buffer control block for generating a clock buffer enable signal in response to first and second signals, wherein the first signal represents a precharge power down mode and the second signal represents a reset of the delay locked loop, a clock buffering block, controlled by the clock buffer enable signal, for buffering an external clock to generate a reference clock, and a feedback loop for delaying the reference clock until a delay locking state to thereby output a DLL output clock.
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