摘要 |
<p>A light emitting device having protection element is provided to protect lighting-emitting area from ESD by parallely setting up the resistive protection element as internal current bypass of the small current in the lighting-emitting area. An emitting device includes a lower semiconductor material layer, an active layer, a top semiconductor material layer, a first electrode layer(114), a second electrode layer(115) and resistive protection layer(120). The top semiconductor material layer, an active layer, a lower semiconductor material layer and active layer are defined as resistance Rf when a positive voltage is applied to the first electrode layer relative to the second electrode layer. The top semiconductor material layer, an active layer, a lower semiconductor material layer and active layer are defined as resistance Rf when a negative voltage is applied to the first electrode layer relative to the second electrode layer. The resistive protection layer, Rs is lower than Rr and larger than Rf.</p> |
申请人 |
SAMSUNG ELECTRO-MECHANICS CO., LTD.;RENSSELAER POLYTECHNIC INSTITUTE |
发明人 |
CHO, JAE HEE;HONG LUO;KIM, JONG KYU;PARK, YONG JO;SONE, CHEOL SOO;SCHUBERT E. FRED |