发明名称 Method and apparatus for the improvement of material/voltage contrast
摘要 A method and system for registering a CAD layout to a Focused Ion Beam image for through-the substrate probing, without using an optical image and without requiring biasing, includes an improved method of trench endpointing during the FIB milling operation with a low beam energy. The method further includes removal of Ga at the trench floor using XeF2, as well as the deposition of an insulating layer onto the trench floor.
申请公布号 US7488937(B2) 申请公布日期 2009.02.10
申请号 US20050252139 申请日期 2005.10.17
申请人 发明人
分类号 H01L21/00 主分类号 H01L21/00
代理机构 代理人
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