| 摘要 |
A method of manufacturing semiconductor device is provided to improve the property of the semiconductor device by controlling the height of the projection pattern in which the active area is protruded. In a method of manufacturing semiconductor device, the element isolation film(202) defining an active area including the gate forming area within the semiconductor substrate(200) is formed. At this time, the element isolation film is extended to the gate forming area. A part thickness of the element isolation film part is etched through a dry cleaning mode using NH3 gas and HF gas. The projection pattern(206) in which the gate forming area is protruded, and the gate covering the projection pattern is formed on the projection pattern and etched element isolation film part.
|
