| 摘要 |
A capacitor of semiconductor device and method for forming the same is provided to prevent wet chemical from being penetrated into the bottom structure in a wet etch process used for removing a mold dielectric film. In a capacitor of semiconductor device and method for forming the same, an interlayer insulating film(102) including contact hole(C) is formed on the top of the semiconductor substrate(100). The storage node contact plug is formed within the contact hole. The protective film(106) composed of a metal silicide layer is formed on the storage node contact plug. The mold dielectric film is formed on the interlayer insulating film including the mold dielectric film. The mold dielectric film is etched and exposes the protective film, and then forms a hole for limiting a node formation area. The cylindrical storage node(112) is formed on the hole surface, and the mold dielectric film is removed. The dielectric layer and plate node(118) are formed on the cylindrical storage node.
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