| 摘要 |
<p>A method for manufacturing mask capable of minimizing critical dimension error on wafer due to mask error is provided to rapidly lithograph a minute pattern by using an optical laser device and an electronic beam laser device. A photoresist film is formed on a non-etching film(S100). A preliminary pattern is written on the photoresist film(S110), and has margin range in an edge of a mask layout pattern. The mask layout pattern is written by lithographing the margin range on the photoresist film(S120). The photoresist film is developed(S130). The non-etching film is etched using the developed photoresist film as mask(S140).</p> |
