| 摘要 |
<p>A method of manufacturing memory device using PN diode is provided to form P-type domain having the uniform doping by performing ion implantation for forming the P-type domain. A first insulating layer(121) is formed on the silicon substrate(110) including the active area. A plurality of contact holes is formed on the N type impurity area(111) of the active area by etching a first insulating layer. An N type silicon film(140) is formed by a SEG process within the contact hole. A first insulating layer is etched to expos the top and the side of N type silicon film. A plurality of PN diodes is formed by performing ion-implanted into the exposed N type silicon film with p type impurity. The second insulating layer is formed on the first insulating layer and it is filled between the PN diodes.</p> |
