NON-VOLATILE MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

A non-volatile memory device and method of manufacturing the same is provided to overcome single channel effect by applying all memory cells to the depletion mode transistor and maintaining have source and drain of the memory cell with parasitic field. In a non-volatile memory device and method of manufacturing the same, the semiconductor substrate(100) is segmented by a cell region and peripheral area. A depletion channel region(104) is formed in the surface of the cell region. A selecting transistor(112) is formed on the peripheral area, and a dummy transistor(114) is adjacent to the selecting transistor on the cell region. A cell transistor(116) is positioned on the cell region between the dummy transistors. Each selecting transistor, dummy transistor and cell transistor are composed of successively laminated gate oxide pattern, floating gate layer pattern, dielectric layer pattern and control gate film pattern.