| 摘要 |
A method for forming isolation layer of semiconductor device is provided to improve the HEIP(Hot Electron Induced Punchthrough) property by suppressing the generation of moat in the element isolation film formation using an STI process. A pad oxide film and pad nitride layer are formed on a semiconductor substrate(200). The pad nitride layer, the pad oxide film and semiconductor substrate are etched and the trench is formed. The side wall oxide(208) is formed on the surface of the trench, and the linear nitride film(210) is formed on the processed substrate. The insulating layer(212) is formed on the linear nitride film and fills up the trench. The insulating layer is CMP so that the pad nitride layer is exposed and it is removed. The oxide film(214) is formed on the top of the processed substrate and fills up the region where the linear nitride film is removed. The oxide film is etched back so that the pad oxide film is exposed, and exposed film is removed.
|
