| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a memory device capable of reducing a threshold voltage distribution of a selection transistor having a charge storage layer, especially a NAND flash memory device and its programming method, and a memory system using the same. <P>SOLUTION: According to the programming method of the NAND flash memory device of the invention, a selection transistor is programmed by a thermal electron injection system, and a selected memory cell is programmed by using F-N tunneling. The program of the thermal electron injection system of the selection transistor of the invention reduces a threshold voltage distribution of the selection transistor. <P>COPYRIGHT: (C)2009,JPO&INPIT |
