| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a photodiode which suppresses dispersion of output characteristics, and to provide a display unit and a manufacturing method of the display unit. <P>SOLUTION: The display unit to be used includes an active matrix substrate 1 with a plurality of active devices formed, and the photodiode 10. The photodiode 10 includes a silicon film 11 provided with a first conductivity type first semiconductor region (a p-layer 6), an intrinsic semiconductor region (an i-layer 7), a first conductivity type second semiconductor region (a p-layer 8), and a second conductivity type third semiconductor region (an n-layer 9) in which the conductivity type is a reverse of the first conductivity type. The silicon film 11 is provided on a base substrate (a glass substrate 4) of the active matrix substrate. The first semiconductor region (the p-layer 6), the intrinsic region (the i-layer 7), the second semiconductor region (the p-layer 8), and the third semiconductor region (the n-layer 9) are arranged in line in order along a surface direction of the silicon film 11. <P>COPYRIGHT: (C)2009,JPO&INPIT |
