LIGHT EMITTING DEVICE, SUBSTRATE PRODUCT FOR LIGHT EMITTING DEVICE, AND METHOD OF FABRICATING LIGHT EMITTING DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a light emitting device including an InGaN layer, which is reduced in influence of distortion, in an active layer.

SOLUTION: A first conductivity type InGaN semiconductor layer 15 is provided on a principal surface 13a of a substrate (for example, a sapphire substrate) 13. An InGaN semiconductor layer 19a is provided on the first conductivity type InGaN semiconductor layer 15. A second conductivity type InGaN semiconductor layer 21 is provided on an active region 17. An axis Ax crossing the principal surface 13a of the substrate 13 at right angles crosses a (c) plane C of the InGaN semiconductor layer 19a. The first conductivity type InGaN semiconductor layer 15 has a thickness D1 of ≥1,000 nm. For example, the first conductivity type InGaN semiconductor layer 15 is an n-type and the second conductivity type InGaN system is a p-type. Consequently, the light emitting device is provided which is reducible in influence of a piezoelectric field.

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