发明名称 MEMORY SYSTEM PROTECTED FROM ERRORS DUE TO READ DISTURBANCE AND METHOD THEREOF
摘要 A memory system for preventing errors due to read disturbance and a method thereof are provided to suppress bit errors due to read disturbance when an operation of reading a particular page is performed repeatedly. A main page reading process is performed to read a main page of a flash memory(1). A reading number increasing process is performed to increase a reading number of the main page(2). The data of the block including the main page is copied to other block when the reading number is larger than the reference value(4). A reset process is performed to reset the reading number of the main page.
申请公布号 KR20090014036(A) 申请公布日期 2009.02.06
申请号 KR20070078262 申请日期 2007.08.03
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 SEOL, BONG GWAN
分类号 G11C16/26;G11C16/34 主分类号 G11C16/26
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