发明名称 |
MEMORY SYSTEM PROTECTED FROM ERRORS DUE TO READ DISTURBANCE AND METHOD THEREOF |
摘要 |
A memory system for preventing errors due to read disturbance and a method thereof are provided to suppress bit errors due to read disturbance when an operation of reading a particular page is performed repeatedly. A main page reading process is performed to read a main page of a flash memory(1). A reading number increasing process is performed to increase a reading number of the main page(2). The data of the block including the main page is copied to other block when the reading number is larger than the reference value(4). A reset process is performed to reset the reading number of the main page.
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申请公布号 |
KR20090014036(A) |
申请公布日期 |
2009.02.06 |
申请号 |
KR20070078262 |
申请日期 |
2007.08.03 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
SEOL, BONG GWAN |
分类号 |
G11C16/26;G11C16/34 |
主分类号 |
G11C16/26 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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