| 摘要 |
A method of manufacturing semiconductor device is provided to compensate the loss of the element isolation film generated in forming the recess gate by using a liner oxidation. In a method of manufacturing semiconductor device, a semiconductor substrate(100) includes the screen oxide having the element isolation film(102). Threshold voltage control ion implantation is performed on the processed semiconductor substrate. The hard mask oxide layer is formed on the processed semiconductor substrate. A hard mask oxide layer and the semiconductor substrate are etched, and the groove(H) is formed on the gate forming area. A liner oxidation(110) is formed on the surface of the groove and the etched hard mask oxide layer to compensate the loss of element isolation film which is generated in forming the groove. The liner oxidation and etched hard mask oxide layer are removed, and the gate(118) is formed on the groove.
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