| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor apparatus which suppresses a longitudinal leak current. SOLUTION: The semiconductor apparatus includes a substrate, a first conductivity type GaN layer provided on the substrate, a barrier layer provided on the GaN layer and formed of In<SB>X</SB>Al<SB>Y</SB>Ga<SB>1-X-Y</SB>N (4.66X≤Y≤4.66X+0.41, X+Y≤1), a channel layer provided on the barrier layer and formed of GaN, an electron supply layer provided on the channel layer and formed of a nitride semiconductor having a larger band gap than the channel layer, a source electrode provided in contact with a surface of the electron supply layer, a drain electrode provided in contact with the surface of the electron supply layer, and a gate electrode provided between the source electrode and drain electrode on the electron supply layer. COPYRIGHT: (C)2009,JPO&INPIT
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