| 摘要 |
PROBLEM TO BE SOLVED: To provide a wafer having two doped layers surrounding a non-doped silicon layer, and used for an MEMS device. SOLUTION: By forming two doped layers around a non-doped core, stress inside a lattice structure of silicon is reduced, as compared to a faithfully doped layer. Thus, problems associated with warpages and arch-like bend are reduced. This wafer can have a patterned oxide layer to pattern the deep reactive ion etching. First deep reactive ion etching creates trenches in the layers. The walls of the trenches are doped with boron atoms. Second deep reactive ion etching removes the bottom walls of the trenches, and the wafer is separated from the silicon substrate and bonded to at least one glass wafer. COPYRIGHT: (C)2009,JPO&INPIT |
