发明名称 |
STRUCTURE OF MAGNETIC RANDOM ACCESS MEMORY AND FABRICATION METHOD THEREOF |
摘要 |
A structure of magnetic random access memory includes a magnetic memory cell formed on a substrate. An insulating layer covers over the substrate and the magnetic memory cell. A write current line is in the insulating layer and above the magnetic memory cell. A magnetic cladding layer surrounds the periphery of the write current line. The magnetic cladding layer includes a first region surrounding the top of the write current line, and a second region surrounding the side edge of the write current line, and extending towards the magnetic memory cell and exceed by a distance.
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申请公布号 |
US2009032891(A1) |
申请公布日期 |
2009.02.05 |
申请号 |
US20070954217 |
申请日期 |
2007.12.12 |
申请人 |
INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE |
发明人 |
YEN CHENG-TYNG;CHEN WEI-CHUAN;CHEN YUNG-HSIANG;WANG YUNG-HUNG |
分类号 |
H01L29/82;H01L21/8246 |
主分类号 |
H01L29/82 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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