| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device that machines a semiconductor device substrate thin to set the thickness of a semiconductor device to 10μm or less and reduces the variation of the thickness. <P>SOLUTION: The method of manufacturing the semiconductor device includes steps of: forming surface grooves and device forming regions on the surface of a silicon substrate; forming insulating films inside the surface grooves to form stopper layers; forming a semiconductor device in each device forming region; etching a silicon layer on the rear faces of the stopper layers from the rear face side of the silicon substrate until reaching the stopper layers to form a plurality of island-like regions; and cutting the plurality of island-like regions by electric discharge machining with a wire. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
