| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor storage device highly integrated by improving a read disturb property. <P>SOLUTION: The semiconductor storage device has at least one control terminal and an information storage section for storing data of discrete n values (n is integer≥2) while being electrically erasable, and is provided with a plurality of memory elements M0-M15 arranged between at least two current terminals, and all of discrete first to n-th threshold voltages of which the data of n values are set in order of low threshold, are higher as compared with lower side voltages among the voltages to be applied to the current terminal at the read-out of data, and a selection element S1 is also included, which is arranged by sharing the current terminal with the memory elements and provided with the threshold voltage lower than all of discrete first to n-th threshold voltages of which the data of n values are set in order of low threshold, when such a voltage of the control terminal is set to the threshold that the conduction state and interrupting state between the current terminals are changed over. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
