| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a data writing method achieving reduction in the circuit area of a nonvolatile semiconductor storage device and the power consumption thereof, and to provide the nonvolatile semiconductor storage device. <P>SOLUTION: The data writing method for writing the data into a memory cell of the nonvolatile semiconductor storage device, and in this method, an external power source voltage to be used for an operation of a plurality of peripheral circuit sections is applied as a drain voltage when writing to the memory cell without being subjected to voltage conversion. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
