| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device capable of effectively arranging a dummy pattern in a mark arranging region. SOLUTION: The manufacturing method of the semiconductor device includes: a process of forming a structure wherein a first alignment mark Ma is provided inside the first alignment mark arranging region MKAa of a first layer La, a second alignment mark Mb is provided inside the second alignment mark arranging region MKAb of a second layer Lb, a dummy pattern Db is provided on the first alignment mark arranging region and the dummy pattern is not provided practically on the second alignment mark arranging region; and a process of structurally aligning a third layer Lc using the second alignment mark. COPYRIGHT: (C)2009,JPO&INPIT |
