| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of evaluating semiconductor wafers, which is capable of evaluating nanotopography of a surface of a semiconductor wafer with a high precision without mirror surface grinding of the semiconductor wafer. SOLUTION: The method of evaluating semiconductor wafers, which evaluates nanotopography of a surface of a semiconductor wafer before a grinding step, includes: a step S4 of using a surface shape measuring means to measure a surface shape of a region having predetermined dimensions from an outer peripheral end part to the inside of the semiconductor wafer before the grinding step in a free state of not making a force act thereon; a step S5 of obtaining an approximation function representing a curve which gives an end part surface shape of the semiconductor wafer, on the basis of measurement results of the surface shape measuring means; and a step S6 of calculating an amount of warpage of he region having the predetermined dimensions from the outer peripheral end part to the inside of the semiconductor wafer, on the basis of the obtained approximation function and evaluating nanotopography of the semiconductor wafer. COPYRIGHT: (C)2009,JPO&INPIT
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