发明名称 SEMICONDUCTOR MANUFACTURING APPARATUS
摘要 PROBLEM TO BE SOLVED: To reduce the power for use in a heater. SOLUTION: A film depositing device 40 includes a main heater 47 for heating a wafer 2, a chamber heater 43 for heating a chamber 42, a supply system heater 71 for heating a gas supply system, and an exhaust system heater 73 for heating an exhaust system. When starting the film depositing device 40, a main controller 80 first supplies power to a power supply device 48 for the main heater 47 having a maximum electric capacity, out of the chamber heater 43, the main heater 47, the supply system heater 71, and the exhaust system heater 73 and then supplies power to a power supply device 43A of the chamber heater 43, a power supply device 72 of the supply system heater 71, and a power supply device 74 of the exhaust system heater 73 at once in response to the fall of a power load. Since it is sufficient if power of the power supply device of the main heater having the maximum electric capacity is considered in equipment specifications of the film depositing device, an initial cost and a running cost can be reduced and a lack of power capacity can be avoided. COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2009027107(A) 申请公布日期 2009.02.05
申请号 JP20070191608 申请日期 2007.07.24
申请人 HITACHI KOKUSAI ELECTRIC INC 发明人 NAKAGAWA HITOSHI
分类号 H01L21/31;C23C16/52 主分类号 H01L21/31
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