| 摘要 |
PROBLEM TO BE SOLVED: To improve characteristics by forming a stable source layer free from the influence of a gate bird's beak. SOLUTION: By implanting ions of an impurity element of a conduction type opposite to that of a body layer 2 from an ion implanting opening 11, a source formation restricting layer 5 extending laterally beyond a region where the gate bird's beak 6 is generated is formed in the body layer 2. A source layer 4 is formed by diffusion in the source formation restricting layer 5 by implanting ions of an impurity element having the same conduction type as that of the source formation restricting layer 5 from the ion implanting opening 11. COPYRIGHT: (C)2009,JPO&INPIT
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