| 摘要 |
PROBLEM TO BE SOLVED: To provide a highly reliable semiconductor device by increasing the withstand voltage of the semiconductor device. SOLUTION: By forming a dielectric separation film 120 in a closed loop shape in a silicon layer 112, an n-type semiconductor layer region 130 in the silicon layer 112 is insulated and separated, and a diffusion resistor 131 is formed inside the region 130. At four corner parts of the n-type semiconductor layer region 130, a p type impurity diffusion region 170 is formed so that at least a part of it is in contact with the dielectric separation film 120. Even when a surge voltage is applied, since a pn junction is formed by the n-type semiconductor layer region 130 and the p type impurity diffusion region 170, the concentration of the surge voltage on a defect is prevented and the destruction of the dielectric separation membrane 120 is prevented. COPYRIGHT: (C)2009,JPO&INPIT
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