| 摘要 |
A solid-state imaging device is provided and includes: a plurality of pairs of photoelectric conversion elements, each pair including a first photoelectric conversion element and a second photoelectric conversion element which are adjacent to each other; a charge transfer path that is disposed adjacently to the first photoelectric conversion element and that transfers in a first direction an electric charge stored in the first photoelectric conversion element; a first charge reading section that is disposed between the charge transfer path and the first photoelectric conversion element and that reads the electric charge stored in the first photoelectric conversion element to the charge transfer path; and a second charge reading section that is disposed between the first photoelectric conversion element and the second photoelectric conversion element and that reads an electric charge stored in the second photoelectric conversion element to the first photoelectric conversion element.
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