| 摘要 |
A programmable memory structure includes a substrate, an active area, a common-source and a common-drain respectively disposed on each side of the active area, a first and a second source contact electrically connected to the common-source, a first and a second drain contact electrically connected to the common-drain, and between the first and the second source contact and the first and the second drain contact a plurality of programmable memory cells including a first and a second dielectric layer respectively encapsulating a first and a second floating gate.
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