发明名称 |
ELECTRO STATIC DISCHARGE DEVICE AND METHOD FOR MANUFACTURING AN ELECTRO STATIC DISCHARGE DEVICE |
摘要 |
An electro static discharge device includes a semiconductor body. The semiconductor body includes a first surface, a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type arranged on the first semiconductor region and a third semiconductor region of the first conductivity type. The third semiconductor region is isolated from the first semiconductor region by the second semiconductor region. A resistor structure is arranged in the semiconductor body and comprises at least one trench structure. The resistor structure is arranged at least in the second semiconductor region and provides a high-resistance electrical connection between a first portion and a second portion of the second semiconductor region.
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申请公布号 |
US2009032906(A1) |
申请公布日期 |
2009.02.05 |
申请号 |
US20070830532 |
申请日期 |
2007.07.30 |
申请人 |
INFINEON TECHNOLOGIES AUSTRIA AG |
发明人 |
OSTERMANN THOMAS;VANNUCCI NICOLA |
分类号 |
H01L27/06;H01L21/8222 |
主分类号 |
H01L27/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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