发明名称 ELECTRO STATIC DISCHARGE DEVICE AND METHOD FOR MANUFACTURING AN ELECTRO STATIC DISCHARGE DEVICE
摘要 An electro static discharge device includes a semiconductor body. The semiconductor body includes a first surface, a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type arranged on the first semiconductor region and a third semiconductor region of the first conductivity type. The third semiconductor region is isolated from the first semiconductor region by the second semiconductor region. A resistor structure is arranged in the semiconductor body and comprises at least one trench structure. The resistor structure is arranged at least in the second semiconductor region and provides a high-resistance electrical connection between a first portion and a second portion of the second semiconductor region.
申请公布号 US2009032906(A1) 申请公布日期 2009.02.05
申请号 US20070830532 申请日期 2007.07.30
申请人 INFINEON TECHNOLOGIES AUSTRIA AG 发明人 OSTERMANN THOMAS;VANNUCCI NICOLA
分类号 H01L27/06;H01L21/8222 主分类号 H01L27/06
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