| 摘要 |
PROBLEM TO BE SOLVED: To provide an insulator film in which relative permittivity and leakage breakdown voltage can be easily changed when being used as the insulator material of a capacitor element constituting a DRAM, which has sufficiently high relative permittivity and leakage breakdown voltage and which can be easily manufactured. SOLUTION: The insulator film 98 is used as the insulator layer of the capacitor element 69 provided with the insulator layer held between an upper electrode 99 and a lower electrode 97, wherein the insulator film 98 comprises titanium dioxide to which at least one of element among lanthanoids, Hf and Y is added. COPYRIGHT: (C)2009,JPO&INPIT |
