| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device, capable of suppressing the potential variations of adjacent vertical diodes when a forward current is applied on vertical diodes, securing stable circuit operation, and reducing the occupied area of an isolation layers among the vertical diodes, with respect to the element area. SOLUTION: A trench groove 20 is formed on a p-type semiconductor layer 1 sandwiched in between an n-type diffusion layer 3 and an n-type diffusion layer 4. An n-type isolation layer 5 is formed at the bottom part of the trench groove 20. P-type isolation layers 6 are formed in the p-type semiconductor layer 1 on both the sides of the trench groove 20. A conductor 16 is filled inside the trench groove 20, a metal electrode 10 is formed on an upper end part of the conductor 16, and the metal electrode 10 is connected to the ground GND. COPYRIGHT: (C)2009,JPO&INPIT |
