NITRIDE SEMICONDUCTOR ELEMENT

摘要

PROBLEM TO BE SOLVED: To achieve long-time continuous oscillation by decreasing the threshold current and voltage of an LD element composed of a nitride semiconductor. SOLUTION: The nitride semiconductor element is constituted by forming an active layer between a nitride semiconductor layer on an n-conductive side and that on a p-conductive side. The nitride semiconductor layer on the n-conductive side and/or p-conductive side is characterized in that an n-side strained superlattice layer is constituted off or in contact with the active layer by laminating first and second nitride semiconductor layers different in band gap energy and impurity concentration. COPYRIGHT: (C)2009,JPO&INPIT