| 摘要 |
Provided are a flash memory device having an improved bit-line layout and a layout method for the flash memory device. The flash memory device in which bit lines are disposed based on double patterning technology (DPT), may include at least one main bit line connected to a cell string including a memory cell storing data, at least one dummy bit line disposed parallel to the at least one main bit line, and a common source line transferring a common source voltage, and disposed on a different layer from a layer on which the at least one main bit line and the at least one dummy bit line are disposed, wherein the at least one dummy bit line may include a first dummy bit line transferring a first voltage and a second dummy bit line transferring a second voltage.
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