| 摘要 |
A film forming method of an alumina film is to form the uniform alumina film on a surface of a work while a bias sputtering method is adopted. The method comprises a step for introducing sputtering gas into a sputtering room (2) where an alumina target T and the work W are oppositely arranged, and a step for applying high frequency negative voltage of constant power of -7.1 W/cm2 to 8 W/cm2 to the alumina target T and applying high frequency negative voltage of -250 V to -300 V to the work W so as to sputter/form alumina on the surface of the work W from the alumina target T. |
