发明名称 HINTERE FELDEMISSIONSPLATTE
摘要 A field emission backplate formed by laser crystallizing of an area of amorphous semiconductor based material. Emitter sites result from the rough surface texture caused by the crystallization process. The crystallization may be localized using laser interferometry, and profiled emitter tips grown on the localized crystalline areas. Such backplates can be used in field emission devices emitting into either a vacuum or a wide band gap light-emitting polymer. Furthermore, a backplate having self-aligned gates can be formed by depositing an insulator layer and a metal layer over the emitter tips, removing the top of the metal layer and etching away the insulator, leaving each tip surrounded by a metal rim. A planarizing agent can be used to refine this process.
申请公布号 DE60224808(T2) 申请公布日期 2009.02.05
申请号 DE2002624808T 申请日期 2002.08.09
申请人 THE UNIVERSITY COURT OF THE UNIVERSITY OF DUNDEE 发明人 ROSE, MERVYN JOHN;SILVA, RAVI;SHANNON, JOHN
分类号 H01J1/304;H01J1/312;H01J9/02;H01J31/12;H01L21/20 主分类号 H01J1/304
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